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58004 W2416 05000 CY62256V GPP100D XFTPR SSM3K12T AD1881
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 BA 585
Silicon PIN Diode
q q
BA 585
Current-controlled RF resistor for switching and attenuating applications. Frequency range 1 MHz ... 2 GHz
Type BA 585
Marking white R
Ordering Code (tape and reel) Q62702-A859
Pin Configuration
Package1) SOD-123
Maximum Ratings Parameter Reverse voltage Forward current Operation temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
Symbol VR IF Top Tstg
Values 50 50 - 55 ... + 150
Unit V mA
- 55 ... + 125 C
450
K/W
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
BA 585
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 30 V Diode capacitance f = 1 MHz, VR = 10 V f= 100 MHz, VR = 0 V Forward resistance f = 100 MHz IF = 1.5 mA IF = 10 mA Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Symbol min. VF IR CT - - rf - - gp LS - - 22 5 70 2.8 40 7 - -
S
Values typ. - - max. 1.1 50 - -
Unit V nA pF
0.28 0.23
0.6 0.4
nH
Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz
Forward resistance rf = f (IF) f = 100 MHz
Semiconductor Group
2


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